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Issue 17, 2015
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A robust ionic liquid–polymer gate insulator for high-performance flexible thin film transistors

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Abstract

Herein, we propose an ionic liquid–polymer dielectric layer for flexible electronics reinforced by a chemical interaction between the polymer matrix (PVP) and the ionic liquid. Due to the robust structures of the cross-linked PVP matrix and hydrogen bonding between the ionic liquid and PVP, the ionic liquid–PVP (IL–PVP) layer exhibited a good mechanical strength when bending up to 1000 times and a stable thermal behaviour up to 300 °C. Furthermore, the IL–PVP dielectric layer showed a high capacitance value of ∼2 μF cm−2 and was operated well as a gate insulator for flexible ZnO thin film transistors with a linear field-effect mobility of ∼3.3 cm2 V−1 s−1 at a gate bias of 3 V.

Graphical abstract: A robust ionic liquid–polymer gate insulator for high-performance flexible thin film transistors

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Supplementary files

Article information


Submitted
09 Jan 2015
Accepted
10 Mar 2015
First published
11 Mar 2015

J. Mater. Chem. C, 2015,3, 4239-4243
Article type
Communication
Author version available

A robust ionic liquid–polymer gate insulator for high-performance flexible thin film transistors

J. Ko, S. J. Lee, K. Kim, E. Lee, K. Lim, J. Myoung, J. Yoo and Y. S. Kim, J. Mater. Chem. C, 2015, 3, 4239
DOI: 10.1039/C5TC00067J

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