Issue 17, 2015
From the journal:

Journal of Materials Chemistry C

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition†

Chang-Soo Park,a   Yu Zhao,b   Yoon Shon,c   Im Taek Yoon,c   Cheol Jin Lee,b   Jin Dong Song,d   Haigun Lee*e  and  Eun Kyu Kim*a  

* Corresponding authors

a Department of Physics and Quantum-Function Research Laboratory, Hanyang University, Seoul 133-791, Korea
E-mail: ek-kim@hanyang.ac.kr
Tel: +82 2 2220 0914

b School of Electrical Engineering, Korea University, Seoul 136-701, Republic of Korea

c Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea

d Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea

e Department of Materials Science Engineering, Korea University, Seoul 136-701, Republic of Korea
E-mail: haigunlee@korea.ac.kr
Tel: +82 2 3290 3265

Abstract

We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (Hc) of 188 Oe and a remanent magnetization of 102 emu cm−3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm2 V−1 s−1 at room temperature.

Graphical abstract: Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

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Article information

DOI
https://doi.org/10.1039/C5TC00051C
Article type
Communication
Submitted
08 Jan 2015
Accepted
08 Mar 2015
First published
09 Mar 2015

J. Mater. Chem. C, 2015,3, 4235-4238

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Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

C. Park, Y. Zhao, Y. Shon, I. T. Yoon, C. J. Lee, J. D. Song, H. Lee and E. K. Kim, J. Mater. Chem. C, 2015, 3, 4235 DOI: 10.1039/C5TC00051C

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