Issue 1, 2015
From the journal:

Journal of Materials Chemistry C

Thienoisoindigo-based copolymer with fused thieno[3,2-b]thiophene as a donor in thin film transistor applications with high performance†

Chi-Min Chen,a   Sunil Sharma,a   Yi-Lun Li,a   Jey-Jau Leeb  and  Show-An Chen*a  

* Corresponding authors

a Chemical Engineering Department and Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing-Hua University, Hsinchu 30013, Taiwan, Republic of China
E-mail: sachen@che.nthu.edu.tw

b National Synchrotron Radiation Research Center, No. 101, Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan, Republic of China
E-mail: jjlee@nsrrc.org.tw

Abstract

A new thienoisoindigo (TIG)-based copolymer with thieno[3,2-b]thiophene as a donor is synthesized. The copolymer with a short π–π stacking distance of 3.43 Å exhibits an excellent hole mobility up to 0.69 cm2 V−1 s−1 under optimum conditions. This performance is the record value among reported TIG-based transistors.

Graphical abstract: Thienoisoindigo-based copolymer with fused thieno[3,2-b]thiophene as a donor in thin film transistor applications with high performance

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Article information

DOI
https://doi.org/10.1039/C4TC02355B
Article type
Communication
Submitted
17 Oct 2014
Accepted
02 Nov 2014
First published
05 Nov 2014

J. Mater. Chem. C, 2015,3, 33-36

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Thienoisoindigo-based copolymer with fused thieno[3,2-b]thiophene as a donor in thin film transistor applications with high performance

C. Chen, S. Sharma, Y. Li, J. Lee and S. Chen, J. Mater. Chem. C, 2015, 3, 33 DOI: 10.1039/C4TC02355B

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