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Issue 8, 2015
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Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals

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Abstract

This paper reports solution-processed metal oxide semiconductor thin film transistors (TFTs), which were produced using fluorine (F) doped ZnO-based aqueous solution. It was found that doping F into the ZnO film improves thin film transparency and TFT performance with an ultrahigh on/off ratio of 108. The F doped ZnO TFT devices showed no improvement in shelf-life stability but improved bias stress stability. Moreover, when the ZnO:F was co-doped with alkali metals like Li, Na, and K, the co-doped ZnO TFT devices exhibited much higher electron mobility, in comparison with ZnO or the ZnO:F TFTs. In addition, the co-doped TFT device exhibited excellent shelf-life stability and bias stress stability. These results suggest that F and alkali metal co-doping can be a useful technique to produce more reliable and low temperature solution-processed ZnO semiconductors for TFTs and their applications.

Graphical abstract: Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals

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Publication details

The article was received on 08 Oct 2014, accepted on 15 Dec 2014 and first published on 17 Dec 2014


Article type: Paper
DOI: 10.1039/C4TC02257B
Citation: J. Mater. Chem. C, 2015,3, 1787-1793

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    Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals

    J. Chang, Z. Lin, M. Lin, C. Zhu, J. Zhang and J. Wu, J. Mater. Chem. C, 2015, 3, 1787
    DOI: 10.1039/C4TC02257B

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