Lite Version|Standard version

To gain access to this content please
Log in via your home Institution.
Log in with your member or subscriber username and password.
Download

A polycyclosilane precursor was synthesized to develop soluble silicon materials and silicon thin films with optical properties at 193 nm, high silicon content, and etch selectivity for O2 and CFx plasmas. A new class of polycyclosilane–polysiloxane hybrid materials and their thin films exhibited good etch selectivity and good optical properties at 193 nm without organic absorbents.

Graphical abstract: Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

Page: ^ Top