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Issue 8, 2015
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Amorphous boron–indium–zinc-oxide active channel layers for thin-film transistor fabrication

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Abstract

We investigate thin-film transistor (TFT) fabrication, using a novel amorphous boron–indium–zinc-oxide (a-BIZO) thin-film as an active channel layer and a radio-frequency sputtering technique. The structural, surface, and optical properties of the a-BIZO thin-film were studied. X-ray diffraction (XRD) patterns and high-resolution transmission electron microscopy (HR-TEM) analysis confirmed the amorphous nature of the a-BIZO thin-film. Atomic force microscopy revealed a smooth a-BIZO thin-film surface with a uniform and root mean square roughness of 0.45 nm. The transparency of a-BIZO thin-films was shown to be more than 80% in the wavelength range between 400 and 800 nm, which confirmed a good transparency. The a-BIZO TFT post-annealed at 250 °C under nitrogen atmospheric conditions showed a saturation field-effect mobility of 9.6 cm2 V−1 s−1, a threshold voltage of 5.3 V, and a subthreshold swing of 0.77 V per dec with an ION/IOFF current ratio of 2.5 × 107. The small amount of boron dopant acts as a strong carrier suppressor via the formation of oxygen vacancies in the a-IZO matrix.

Graphical abstract: Amorphous boron–indium–zinc-oxide active channel layers for thin-film transistor fabrication

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Supplementary files

Article information


Submitted
17 Aug 2014
Accepted
02 Dec 2014
First published
08 Dec 2014

J. Mater. Chem. C, 2015,3, 1661-1665
Article type
Paper
Author version available

Amorphous boron–indium–zinc-oxide active channel layers for thin-film transistor fabrication

S. Parthiban and J. Kwon, J. Mater. Chem. C, 2015, 3, 1661
DOI: 10.1039/C4TC01831A

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