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Issue 113, 2015
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Chemical and mechanical strains tuned dielectric properties in Zr-doped CaCu3Ti4O12 highly epitaxial thin films

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Abstract

The nature of strain tuned dielectric properties in CaCu3Ti4O12 (CCTO) films was systematically studied with chemical strain (various doping rates) and physical strain (different oxygen pressure treatments). Microstructural characterization revealed that the lattice parameters of the highly epitaxial CCTO thin films are strongly dependent upon both Zr doping rates and annealing oxygen pressures. Dielectric property measurements indicate that the dielectric loss can be tuned by optimizing the doping rate and annealing oxygen pressure. These findings indicate that the dielectric properties of CCTO can be manipulated by the in-plane strain achieved from either chemical or physical treatment.

Graphical abstract: Chemical and mechanical strains tuned dielectric properties in Zr-doped CaCu3Ti4O12 highly epitaxial thin films

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Article information


Submitted
06 Sep 2015
Accepted
26 Oct 2015
First published
26 Oct 2015

RSC Adv., 2015,5, 92958-92962
Article type
Paper
Author version available

Chemical and mechanical strains tuned dielectric properties in Zr-doped CaCu3Ti4O12 highly epitaxial thin films

M. Gao, D. Feng, G. Yao, Y. Zhang, C.-L. Chen and Y. Lin, RSC Adv., 2015, 5, 92958
DOI: 10.1039/C5RA18149F

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