To investigate the effect of Li dopant on the electrical characteristics under negative bias stress (NBS), we analysed ZnO TFTs and Li doped ZnO TFTs under NBS at −20 V for 10 800 s. The Li dopant enhanced the field effect mobility (8.21 cm2 V−1 s−1) and successfully sustained the variation in the Von of the ZnO TFT without any degradation of the field effect mobility.
B. Kim, S. Y. Park, J. Ko, Y. Kim and Y. S. Kim, RSC Adv., 2015, 5, 68392 DOI: 10.1039/C5RA11480B
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