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Issue 15, 2016
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Bandgap tunable colloidal Cu-based ternary and quaternary chalcogenide nanosheets via partial cation exchange

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Abstract

Copper based ternary and quaternary semiconductor nanostructures are of great interest for the fabrication of low cost photovoltaics. Although well-developed syntheses are available for zero dimensional (0D) nanoparticles, colloidal synthesis of two dimensional (2D) nanosheets remains a big challenge. Here we report, for the first time, a simple and reproducible cation exchange approach for 2D colloidal Cu2GeSe3, Cu2ZnGeSe4 and their alloyed Cu2GeSxSe3−x, Cu2ZnGeSxSe4−x nanosheets using pre-synthesized Cu2xSe nanosheets as a template. A mechanism for the formation of Cu2−xSe nanosheets has been studied in detail. In situ oxidation of Cu+ ions to form a CuSe secondary phase facilitates the formation of Cu2−xSe NSs. The obtained ternary and quaternary nanosheets have average lateral size in micrometers and thickness less than 5 nm. This method is general and can be extended to produce other important ternary semiconductor nanosheets such as CuIn1−xGaxSe2. The optical band gap of these nanosheets is tuned from 1 to 1.48 eV, depending on their composition.

Graphical abstract: Bandgap tunable colloidal Cu-based ternary and quaternary chalcogenide nanosheets via partial cation exchange

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Supplementary files

Article information


Submitted
06 Dec 2015
Accepted
18 Dec 2015
First published
23 Dec 2015

Nanoscale, 2016,8, 7906-7913
Article type
Paper
Author version available

Bandgap tunable colloidal Cu-based ternary and quaternary chalcogenide nanosheets via partial cation exchange

P. Ramasamy, M. Kim, H. Ra, J. Kim and J. Lee, Nanoscale, 2016, 8, 7906
DOI: 10.1039/C5NR08666C

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