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Issue 48, 2015
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Exciton band structure in layered MoSe2: from a monolayer to the bulk limit

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Abstract

We present the micro-photoluminescence (μPL) and micro-reflectance contrast (μRC) spectroscopy studies on thin films of MoSe2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at various points of the Brillouin zone is determined. Temperature activated energy shifts and linewidth broadenings of the excitonic resonances in 1L, 2L and 3L flakes are accounted for by using standard formalisms previously developed for semiconductors. A peculiar shape of the optical response of the ground state (A) exciton in monolayer MoSe2 is tentatively attributed to the appearance of a Fano-type resonance. Rather trivial and clearly decaying PL spectra of monolayer MoSe2 with temperature confirm that the ground state exciton in this material is optically bright in contrast to a dark exciton ground state in monolayer WSe2.

Graphical abstract: Exciton band structure in layered MoSe2: from a monolayer to the bulk limit

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Article information


Submitted
01 Oct 2015
Accepted
09 Nov 2015
First published
10 Nov 2015

Nanoscale, 2015,7, 20769-20775
Article type
Paper
Author version available

Exciton band structure in layered MoSe2: from a monolayer to the bulk limit

A. Arora, K. Nogajewski, M. Molas, M. Koperski and M. Potemski, Nanoscale, 2015, 7, 20769
DOI: 10.1039/C5NR06782K

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