Jump to main content
Jump to site search

Issue 40, 2015

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

Author affiliations

Abstract

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Herein, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, therefore eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on a way to obtain smaller quantum dots on TMDCs with the same top gate geometry compared to traditional GaAs/AlGaAs heterostructures with further research.

Graphical abstract: A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

Article information


Submitted
24 Jul 2015
Accepted
09 Sep 2015
First published
11 Sep 2015

Nanoscale, 2015,7, 16867-16873
Article type
Paper
Author version available

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

X. Song, D. Liu, V. Mosallanejad, J. You, T. Han, D. Chen, H. Li, G. Cao, M. Xiao, G. Guo and G. Guo, Nanoscale, 2015, 7, 16867 DOI: 10.1039/C5NR04961J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.


Social activity

Search articles by author

Spotlight

Advertisements