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Issue 30, 2015
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Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics

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Abstract

Using thermally evaporated cesium carbonate (Cs2CO3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ∼90% reduction in its sheet resistance to ∼250 Ohm sq−1. Photoemission spectroscopy confirms the presence of a large interface dipole of ∼0.9 eV between graphene and the Cs2CO3/organic matrix. This leads to a strong charge transfer based doping of graphene with a Fermi level shift of ∼1.0 eV. Using this approach we demonstrate efficient, standard industrial manufacturing process compatible graphene-based inverted organic light emitting diodes on glass and flexible substrates with efficiencies comparable to those of state-of-the-art ITO based devices.

Graphical abstract: Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics

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Supplementary files

Article information


Submitted
18 May 2015
Accepted
30 Jun 2015
First published
06 Jul 2015

Nanoscale, 2015,7, 13135-13142
Article type
Paper

Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics

S. Sanders, A. Cabrero-Vilatela, P. R. Kidambi, J. A. Alexander-Webber, C. Weijtens, P. Braeuninger-Weimer, A. I. Aria, M. M. Qasim, T. D. Wilkinson, J. Robertson, S. Hofmann and J. Meyer, Nanoscale, 2015, 7, 13135
DOI: 10.1039/C5NR03246F

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