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Issue 18, 2015

Two-dimensional materials and their prospects in transistor electronics

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Abstract

During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided.

Graphical abstract: Two-dimensional materials and their prospects in transistor electronics

Article information


Submitted
13 Feb 2015
Accepted
31 Mar 2015
First published
03 Apr 2015

This article is Open Access

Nanoscale, 2015,7, 8261-8283
Article type
Feature Article

Two-dimensional materials and their prospects in transistor electronics

F. Schwierz, J. Pezoldt and R. Granzner, Nanoscale, 2015, 7, 8261 DOI: 10.1039/C5NR01052G

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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