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Issue 18, 2015
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Two-dimensional materials and their prospects in transistor electronics

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Abstract

During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided.

Graphical abstract: Two-dimensional materials and their prospects in transistor electronics

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Publication details

The article was received on 13 Feb 2015, accepted on 31 Mar 2015 and first published on 03 Apr 2015


Article type: Feature Article
DOI: 10.1039/C5NR01052G
Citation: Nanoscale, 2015,7, 8261-8283
  • Open access: Creative Commons BY license
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    Two-dimensional materials and their prospects in transistor electronics

    F. Schwierz, J. Pezoldt and R. Granzner, Nanoscale, 2015, 7, 8261
    DOI: 10.1039/C5NR01052G

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