Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

Abstract

With a band gap of 2.28 eV, In₂S₃ is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In₂S₃ nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In₂S₃ nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high I_on/I_off ratio up to 10⁶ and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 10⁴ A W⁻¹ and 2.28 × 10⁷%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In₂S₃ nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.