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Issue 8, 2015
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Highly air stable passivation of graphene based field effect devices

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Abstract

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

Graphical abstract: Highly air stable passivation of graphene based field effect devices

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Supplementary files

Article information


Submitted
17 Dec 2014
Accepted
13 Jan 2015
First published
15 Jan 2015

Nanoscale, 2015,7, 3558-3564
Article type
Paper

Highly air stable passivation of graphene based field effect devices

A. A. Sagade, D. Neumaier, D. Schall, M. Otto, A. Pesquera, A. Centeno, A. Z. Elorza and H. Kurz, Nanoscale, 2015, 7, 3558
DOI: 10.1039/C4NR07457B

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