Issue 7, 2015

Exciton diffusion in organic semiconductors

Abstract

The purpose of this review is to provide a basic physical description of the exciton diffusion in organic semiconductors. Furthermore, experimental methods that are used to measure the key parameters of this process as well as strategies to manipulate the exciton diffusion length are summarized. Special attention is devoted to the temperature dependence of exciton diffusion and its relationship to Förster energy transfer rates. An extensive table of more than a hundred measurements of the exciton diffusion length in various organic semiconductors is presented. Finally, an outlook of remaining challenges for future research is provided.

Graphical abstract: Exciton diffusion in organic semiconductors

Article information

Article type
Review Article
Submitted
20 Mar 2015
Accepted
22 May 2015
First published
22 May 2015

Energy Environ. Sci., 2015,8, 1867-1888

Author version available

Exciton diffusion in organic semiconductors

O. V. Mikhnenko, P. W. M. Blom and T. Nguyen, Energy Environ. Sci., 2015, 8, 1867 DOI: 10.1039/C5EE00925A

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