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Issue 9, 2015
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Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

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Abstract

Ultrathin two-dimensional (2D) nanomaterials, such as graphene and MoS2, hold great promise for electronics and optoelectronics due to their distinctive physical and electronic properties. Recent progress in high-yield, massive production of ultrathin 2D nanomaterials via various solution-based methods allows them to be easily integrated into electronic devices via solution processing techniques. Non-volatile resistive memory devices based on ultrathin 2D nanomaterials have been emerging as promising alternatives for the next-generation data storage devices due to their high flexibility, three-dimensional-stacking capability, simple structure, transparency, easy fabrication and low cost. In this tutorial review, we will summarize the recent progress in the utilization of solution-processed ultrathin 2D nanomaterials for fabrication of non-volatile resistive memory devices. Moreover, we demonstrate how to achieve excellent device performance by engineering the active layers, electrodes and/or device structure of resistive memory devices. On the basis of current status, the discussion is concluded with some personal insights into the challenges and opportunities in future research directions.

Graphical abstract: Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

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Publication details

The article was received on 19 Nov 2014 and first published on 16 Apr 2015


Article type: Tutorial Review
DOI: 10.1039/C4CS00399C
Chem. Soc. Rev., 2015,44, 2615-2628
  • Open access: Creative Commons BY-NC license
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    Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

    C. Tan, Z. Liu, W. Huang and H. Zhang, Chem. Soc. Rev., 2015, 44, 2615
    DOI: 10.1039/C4CS00399C

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