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Issue 1, 2016
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Resistive switching properties of epitaxial BaTiO3−δ thin films tuned by after-growth oxygen cooling pressure

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Abstract

BaTiO3−δ, i.e. oxygen-deficient barium titanate (BaTiO3), thin films grown on GdScO3(110) substrates with SrRuO3 conductive electrodes by pulsed laser deposition are studied by X-ray diffraction and conductive AFM to characterize their structure and nanoscale electronic properties. Bias- and time-dependent resistive switching measurements reveal a strong dependence on the oxygen vacancy concentration, which can be tuned by after-growth oxygen cooling conditions of thin films. The results indicate that the resistive switching properties of BaTiO3−δ can be enhanced by controlling oxygen deficiency and provide new insight for potential non-volatile resistive random-access memory (RRAM) applications.

Graphical abstract: Resistive switching properties of epitaxial BaTiO3−δ thin films tuned by after-growth oxygen cooling pressure

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Supplementary files

Article information


Submitted
07 Sep 2015
Accepted
08 Nov 2015
First published
25 Nov 2015

Phys. Chem. Chem. Phys., 2016,18, 197-204
Article type
Paper
Author version available

Resistive switching properties of epitaxial BaTiO3−δ thin films tuned by after-growth oxygen cooling pressure

Y. Heo, D. Kan, Y. Shimakawa and J. Seidel, Phys. Chem. Chem. Phys., 2016, 18, 197
DOI: 10.1039/C5CP05333A

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