Issue 18, 2015
From the journal:

CrystEngComm

In situ solvothermal growth of highly oriented Zr-based metal organic framework UiO-66 film with monocrystalline layer†

M. Miyamoto,*a   S. Kohmura,b   H. Iwatsuka,b   Y. Oumic  and  S. Uemiyaa  

* Corresponding authors

a Department of Chemistry and Biomolecular Science, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan
E-mail: m_miya@gifu-u.ac.jp

b Department of Materials Science and Technology, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan

c Division of Instrumental Analysis, Life Science Research Center, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan

Abstract

A highly oriented UiO-66 film, with a monocrystalline layer, was successfully prepared by the solvothermal method. Acetic acid, which served as a modulator, was essential to achieve high film orientation. Water played an important role in promoting the intergrowth of UiO-66 crystals.

Graphical abstract: In situ solvothermal growth of highly oriented Zr-based metal organic framework UiO-66 film with monocrystalline layer

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Article information

DOI
https://doi.org/10.1039/C5CE00462D
Article type
Communication
Submitted
06 Mar 2015
Accepted
31 Mar 2015
First published
31 Mar 2015

CrystEngComm, 2015,17, 3422-3425

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In situ solvothermal growth of highly oriented Zr-based metal organic framework UiO-66 film with monocrystalline layer

M. Miyamoto, S. Kohmura, H. Iwatsuka, Y. Oumi and S. Uemiya, CrystEngComm, 2015, 17, 3422 DOI: 10.1039/C5CE00462D

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