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Issue 3, 2015
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Crystallization of rubrene on a nanopillar-templated surface by the melt-recrystallization process and its application in field-effect transistors

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Abstract

We present an approach to fabricate a continuous and crystalline rubrene film using the melt-recrystallization process with the assistance of a silicon nanopillar template. Better film morphology, enhanced crystallinity, and mainly oriented crystallites with the c-axis of the orthorhombic rubrene aligning parallel to the nanopillars were obtained as compared to that on a planar substrate. The oriented crystal growth is further modulated by the surface modification. It is suggested that the sidewalls of nanopillars play a key role in mediating the switch of crystal orientation and crystal growth. The obtained nanopillar-templated rubrene film was used to fabricate a vertical field-effect transistor. The device gave a current density of 78 mA cm−2, on–off ratio around 103−4, subthreshold swing of 89.1 mV per decade and transconductance of 154.9 mS cm−2 on an ODTS-modified substrate surface.

Graphical abstract: Crystallization of rubrene on a nanopillar-templated surface by the melt-recrystallization process and its application in field-effect transistors

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Publication details

The article was received on 03 Oct 2014, accepted on 13 Nov 2014 and first published on 13 Nov 2014


Article type: Communication
DOI: 10.1039/C4CC07739C
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Chem. Commun., 2015,51, 603-606

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    Crystallization of rubrene on a nanopillar-templated surface by the melt-recrystallization process and its application in field-effect transistors

    C. Ho and Y. Tao, Chem. Commun., 2015, 51, 603
    DOI: 10.1039/C4CC07739C

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