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Issue 35, 2015
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Chemical synthesis of high quality epitaxial vanadium dioxide films with sharp electrical and optical switch properties

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Abstract

The effective preparation method of epitaxial VO2 films on the r-Al2O3 substrates based on the MOCVD technique and post-deposition annealing is described. The composition, orientation and morphology of the films obtained were investigated by Raman spectroscopy, XRD, EBSD, XPS, SEM and AFM methods. The samples obtained demonstrate high crystal quality and excellent physical properties: sharp metal-insulator (>104 resistance change) and intensive optical reflectivity (IR and THz regions) transitions. The model of VO2 film recrystallization based on the peritectic decomposition of intergrain vanadium oxide phases is proposed.

Graphical abstract: Chemical synthesis of high quality epitaxial vanadium dioxide films with sharp electrical and optical switch properties

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Supplementary files

Article information


Submitted
18 Jun 2015
Accepted
07 Aug 2015
First published
10 Aug 2015

J. Mater. Chem. C, 2015,3, 9197-9205
Article type
Paper
Author version available

Chemical synthesis of high quality epitaxial vanadium dioxide films with sharp electrical and optical switch properties

A. M. Makarevich, I. I. Sadykov, D. I. Sharovarov, V. A. Amelichev, A. A. Adamenkov, D. M. Tsymbarenko, A. V. Plokhih, M. N. Esaulkov, P. M. Solyankin and A. R. Kaul, J. Mater. Chem. C, 2015, 3, 9197
DOI: 10.1039/C5TC01811K

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