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Issue 16, 2015
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Stability and electronic properties of silicene on WSe2

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Abstract

Many semiconducting substrates, such as GaS and MgBr2, have been explored for silicene. However, large lattice mismatches, complicated control of terminal layers and small band gaps are critical limiting factors. First-principles results on the stability and electronic properties of silicene on WSe2 show that the energy barriers for lateral translation between the two subsystems are very small due to weak van der Waals interactions. For the same reason, the Dirac physics of silicene is preserved. It turns out that the induced band gap is sufficient to withstand thermal fluctuations.

Graphical abstract: Stability and electronic properties of silicene on WSe2

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Article information


Submitted
12 Feb 2015
Accepted
01 Mar 2015
First published
17 Mar 2015

This article is Open Access

J. Mater. Chem. C, 2015,3, 3946-3953
Article type
Paper
Author version available

Stability and electronic properties of silicene on WSe2

J. Zhu and U. Schwingenschlögl, J. Mater. Chem. C, 2015, 3, 3946
DOI: 10.1039/C5TC00435G

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