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Issue 15, 2015
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Near infrared photoluminescence of the univalent bismuth impurity center in leucite and pollucite crystal hosts

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Abstract

The bismuth doped aluminosilicate phases leucite (KAlSi2O6), gallium leucite (KGaSi2O6) and pollucite (CsAlSi2O6) display broadband NIR photoluminescence. The active center, responsible for this luminescence, is the Bi+ monocation, which substitutes for the large alkali metal cations. The Al,Si-disorder in the aluminosilicate framework of studied crystal phases results in the heterogeneity of Bi+ luminescent center population, which manifests itself in the characteristic dependency of the luminescence spectrum shape on the excitation wavelength. The relation of NIR emission in Bi+-doped leucite and pollucite phases to the luminescent properties of bismuth-doped glasses is also discussed.

Graphical abstract: Near infrared photoluminescence of the univalent bismuth impurity center in leucite and pollucite crystal hosts

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Article information


Submitted
14 Nov 2014
Accepted
08 Feb 2015
First published
10 Feb 2015

J. Mater. Chem. C, 2015,3, 3592-3598
Article type
Paper
Author version available

Near infrared photoluminescence of the univalent bismuth impurity center in leucite and pollucite crystal hosts

A. N. Romanov, A. A. Veber, D. N. Vtyurina, Z. T. Fattakhova, E. V. Haula, D. P. Shashkin, V. B. Sulimov, V. B. Tsvetkov and V. N. Korchak, J. Mater. Chem. C, 2015, 3, 3592
DOI: 10.1039/C4TC02606C

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