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Issue 39, 2015
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Thermoelectric and electrical transport properties of Mg2Si multi-doped with Sb, Al and Zn

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Abstract

Enhanced thermoelectric and electrical transport properties of Mg2Si-based thermoelectric materials have been achieved by multi-doping with Sb, Al and Zn. Results on the investigation of the electrical transport and thermoelectric properties of multi-doped samples prepared using the spark plasma sintering technique are reported. Synchrotron radiation powder X-ray diffraction was used to characterize the structures of the doped samples. The electrical transport properties were determined from mid-infrared reflectivities, Hall effect and conventional quasi-four probe conductivity measurements. Using the electron concentrations (N) determined from the Hall coefficients, the effective masses (m*) were calculated from the frequency of the plasma edge (ωP) of the infrared reflectivities. The thermoelectric performance and thermoelectric figure of merits (ZT) in the temperature range of 300 K to 900 K of the doped Mg2Si compounds were calculated from the measured temperature dependent electrical conductivity (σ), Seebeck coefficient (S), and thermal conductivity (κ). A maximum ZT of 0.964 was found for Sb0.5%Zn0.5% doped Mg2Si at 880 K. This value is comparable to those of PbTe based thermoelectric materials.

Graphical abstract: Thermoelectric and electrical transport properties of Mg2Si multi-doped with Sb, Al and Zn

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Article information


Submitted
24 May 2015
Accepted
17 Aug 2015
First published
18 Aug 2015

J. Mater. Chem. A, 2015,3, 19774-19782
Article type
Paper
Author version available

Thermoelectric and electrical transport properties of Mg2Si multi-doped with Sb, Al and Zn

J. Zhao, Z. Liu, J. Reid, K. Takarabe, T. Iida, B. Wang, U. Yoshiya and J. S. Tse, J. Mater. Chem. A, 2015, 3, 19774
DOI: 10.1039/C5TA03751D

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