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Issue 18, 2015
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High performance H2 evolution realized in 20 μm-thin silicon nanostructured photocathodes

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Abstract

Thickness reduction in high-purity silicon wafers is beneficial for cost-efficient hydrogen evolution utilizing silicon photocathodes. However, two major issues need to be resolved: insufficient light absorption by a thin Si absorber and poor charge transfer reaction by dominant surface recombination. Here, we present 20 μm-thin Si photocathodes employing Pt-nanoparticle-coated silicon nanoholes that realize a photocurrent of 23 mA cm−2 (at 0 V vs. RHE) corresponding to the amount typically achieved by a conventional wafer (∼200 μm-thick).

Graphical abstract: High performance H2 evolution realized in 20 μm-thin silicon nanostructured photocathodes

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Supplementary files

Article information


Submitted
08 Jan 2015
Accepted
01 Apr 2015
First published
02 Apr 2015

J. Mater. Chem. A, 2015,3, 9456-9460
Article type
Communication
Author version available

High performance H2 evolution realized in 20 μm-thin silicon nanostructured photocathodes

J. Jung, M. Park, X. Li, J. Kim, R. B. Wehrspohn and J. Lee, J. Mater. Chem. A, 2015, 3, 9456
DOI: 10.1039/C5TA00156K

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