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Issue 115, 2015

Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors

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Abstract

We present a simple method to microfluidically align and trap 1D nanostructures from suspension at well-defined positions on a receiver substrate for the fabrication of single-nanowire field effect transistors (NW FETs). Our approach allows for subsequent contacting of deposited NWs via standard UV-lithography. We demonstrate that silicon as well as copper(II) oxide NWs can be processed, and that up to 13 out of 32 designated trapping sites are occupied with single-NW FETs.

Graphical abstract: Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors

Supplementary files

Article information


Submitted
02 Oct 2015
Accepted
28 Oct 2015
First published
29 Oct 2015

RSC Adv., 2015,5, 94702-94706
Article type
Communication
Author version available

Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors

A. Gang, N. Haustein, L. Baraban, W. Weber, T. Mikolajick, J. Thiele and G. Cuniberti, RSC Adv., 2015, 5, 94702 DOI: 10.1039/C5RA20414C

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