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Issue 62, 2015
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Stable negative differential resistance in porphyrin based σ–π–σ monolayers grafted on silicon

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Abstract

Two Si-based hybrid self-assembled monolayers were synthesized by electro-grafting two di-O-alkylated porphyrins as the σ–π–σ systems. The monolayers showed a stable and reversible negative differential resistance (NDR) property at room temperature. The monolayer, fabricated using the porphyrin with fluorophenyl groups was more compact and showed a tenfold peak-to-valley ratio (PVR) relative to the other similar system devoid of the fluorine atoms in the porphyrin moiety. This suggested better pre-organization of the former, possibly by hydrogen bonding through the electro-negative fluorine atoms.

Graphical abstract: Stable negative differential resistance in porphyrin based σ–π–σ monolayers grafted on silicon

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Supplementary files

Article information


Submitted
20 May 2015
Accepted
01 Jun 2015
First published
01 Jun 2015

This article is Open Access

RSC Adv., 2015,5, 50234-50244
Article type
Paper
Author version available

Stable negative differential resistance in porphyrin based σ–π–σ monolayers grafted on silicon

K. Garg, C. Majumder, S. K. Gupta, D. K. Aswal, S. K. Nayak and S. Chattopadhyay, RSC Adv., 2015, 5, 50234
DOI: 10.1039/C5RA09484D

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