Issue 9, 2015

Certified ion implantation fluence by high accuracy RBS


From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering spectrometry (RBS) of test implants from our quality assurance programme. The RBS is traceable to the certified reference material IRMM-ERM-EG001/BAM-L001, and involves convenient calibrations both of the electronic gain of the spectrometry system (at about 0.1% accuracy) and of the RBS beam energy (at 0.06% accuracy). We demonstrate that accurate RBS is a definitive method to determine quantity of material. It is therefore useful for certifying high quality reference standards, and is also extensible to other kinds of samples such as thin self-supporting films of pure elements. The more powerful technique of Total-IBA may inherit the accuracy of RBS.

Graphical abstract: Certified ion implantation fluence by high accuracy RBS

Article information

Article type
16 Dec 2014
11 Feb 2015
First published
11 Feb 2015
This article is Open Access
Creative Commons BY license

Analyst, 2015,140, 3251-3261

Author version available

Certified ion implantation fluence by high accuracy RBS

J. L. Colaux, C. Jeynes, K. C. Heasman and R. M. Gwilliam, Analyst, 2015, 140, 3251 DOI: 10.1039/C4AN02316A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity