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Issue 43, 2014
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High performance ambipolar organic field-effect transistors based on indigo derivatives

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Abstract

A bio-inspired organic semiconductor 5,5′-diphenylindigo shows excellent and well-balanced ambipolar transistor properties; its hole and electron mobilities are 0.56 and 0.95 cm2 V−1 s−1, respectively. The enhanced performance is attributed to the extended π–π overlap of the phenyl groups as well as the characteristic packing pattern that is a hybrid of the herringbone and brickwork structures. The ambipolar transistor characteristics are analyzed considering its operating regions, where a large unipolar saturated region appears due to the difference of the electron and hole threshold voltages.

Graphical abstract: High performance ambipolar organic field-effect transistors based on indigo derivatives

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Publication details

The article was received on 17 Jul 2014, accepted on 14 Sep 2014 and first published on 17 Sep 2014


Article type: Paper
DOI: 10.1039/C4TC01563K
Citation: J. Mater. Chem. C, 2014,2, 9311-9317
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    High performance ambipolar organic field-effect transistors based on indigo derivatives

    O. Pitayatanakul, T. Higashino, T. Kadoya, M. Tanaka, H. Kojima, M. Ashizawa, T. Kawamoto, H. Matsumoto, K. Ishikawa and T. Mori, J. Mater. Chem. C, 2014, 2, 9311
    DOI: 10.1039/C4TC01563K

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