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Issue 5, 2015
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Reducing the effects of shot noise using nanoparticles

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Abstract

We report a hybrid nano-lithographic approach to minimizing the effects of line-edge roughness and shot noise in nano-hole patterning. Photoresist polymers were reflowed around nanoparticles deposited by self-assembly and simple etch chemistry. The method extends the transistor contact hole patterning limits to <20 nm.

Graphical abstract: Reducing the effects of shot noise using nanoparticles

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Supplementary files

Article information


Submitted
24 Jun 2014
Accepted
13 Nov 2014
First published
14 Nov 2014

J. Mater. Chem. C, 2015,3, 955-959
Article type
Communication
Author version available

Reducing the effects of shot noise using nanoparticles

M. K. Morakinyo and S. B. Rananavare, J. Mater. Chem. C, 2015, 3, 955
DOI: 10.1039/C4TC01339E

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