Issue 30, 2014

Simultaneous engineering of the interface and bulk layer of Al/sol-NiOx/Si structured resistive random access memory devices

Abstract

In our previous work, the pristine sol-NiOx/Si based device did not exhibit reproducible resistive switching due to the presence of native interlayer oxide. To solve this problem, we investigated high-pressure hydrogen gas annealing at a stack of Al/sol-NiOx/Si to engineer the interface and bulk layer simultaneously. Different from the pure nitrogen high-pressure gas annealing which only affects the bulk properties of the system, we found that the high-pressure hydrogen gas can alter both the interfaces and bulk layers. As a result, the native interlayer oxide thickness at the NiOx/Si interface was reduced and the overall density of oxygen vacancies was increased due to the reduction of atomic hydrogen. Consequently, a good condition for less randomized generation of conducting pathways was secured which led to improved stability of high- and low-resistance states, as well as a larger ratio of high and low resistances regardless of a high free energy of formation at the bottom electrode (Si).

Graphical abstract: Simultaneous engineering of the interface and bulk layer of Al/sol-NiOx/Si structured resistive random access memory devices

Article information

Article type
Paper
Submitted
28 Apr 2014
Accepted
30 May 2014
First published
30 Jun 2014
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2014,2, 6148-6154

Simultaneous engineering of the interface and bulk layer of Al/sol-NiOx/Si structured resistive random access memory devices

D. H. Yoon, Y. J. Tak, S. P. Park, J. Jung, H. Lee and H. J. Kim, J. Mater. Chem. C, 2014, 2, 6148 DOI: 10.1039/C4TC00858H

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