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Issue 36, 2014
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Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure

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Abstract

Graphene has attracted a great deal of research interest owing to its unique properties and many potential applications. Chemical vapor deposition has shown some potential for the growth of large-scale and uniform graphene films; however, a high temperature (over 800 °C) is usually required for such growth. A whole new method for the synthesis of graphene at low temperatures by means of remote plasma-enhanced atomic layer deposition is developed in this work. Liquid benzene was used as a carbon source. Large graphene sheets with excellent quality were prepared at a growth temperature as low as 400 °C. The atomic structure of the graphene was characterized by means of aberration-corrected transmission electron microscopy. Hexagonal carbon rings and carbon atoms were observed, indicating a highly crystalline structure of the graphene. These results point to a new technique for the growth of high-quality graphene for potential device applications.

Graphical abstract: Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure

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Supplementary files

Article information


Submitted
27 Apr 2014
Accepted
11 Jul 2014
First published
14 Jul 2014

J. Mater. Chem. C, 2014,2, 7570-7574
Article type
Paper
Author version available

Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure

Y. Zhang, W. Ren, Z. Jiang, S. Yang, W. Jing, P. Shi, X. Wu and Z. Ye, J. Mater. Chem. C, 2014, 2, 7570
DOI: 10.1039/C4TC00849A

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