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Issue 29, 2014
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Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

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Abstract

We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from ∼24% to ∼12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.

Graphical abstract: Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

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Article information


Submitted
10 Mar 2014
Accepted
13 Apr 2014
First published
16 Apr 2014

J. Mater. Chem. C, 2014,2, 5787-5792
Article type
Paper

Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

M. D. Smith, E. Taylor, T. C. Sadler, V. Z. Zubialevich, K. Lorenz, H. N. Li, J. O'Connell, E. Alves, J. D. Holmes, R. W. Martin and P. J. Parbrook, J. Mater. Chem. C, 2014, 2, 5787
DOI: 10.1039/C4TC00480A

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