Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process

Amorphous metal oxide thin film transistors (TFTs) are expected to serve as building blocks in a variety of devices, such as bendable displays, transparent mobile phones, and plastic newspapers. Here, we report a simple approach for highly stable solution-based zinc oxide (ZnO) TFTs by simply evaporating Al on the back channel layer without any additional chemical or plasma process for passivation. In particular, control and manipulation of Al nanoparticle (NP) formation represents one of the key approaches in this work. The possible sketch of the improved nature is proposed, along with various structural and electrical analyses.