Issue 5, 2014
From the journal:

Journal of Materials Chemistry C

Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates

Weijia Yang,a   Wenliang Wang,a   Yunhao Lin,a   Zuolian Liu,a   Shizhong Zhou,a   Huirong Qian,a   Fangliang Gao,a   Shuguang Zhanga  and  Guoqiang Li*ab  

* Corresponding authors

a State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China

b Department of Electronic Materials, South China University of Technology, Guangzhou 510641, China
E-mail: msgli@scut.edu.cn

Abstract

High-quality nonpolar m-plane InGaN/GaN multiple quantum wells (MQWs) have been deposited on LiGaO2(100) substrates by the combination of pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) technologies. This work opens up a new prospect for achieving high-efficiency nonpolar m-plane GaN-based devices.

Graphical abstract: Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates

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Article information

DOI
https://doi.org/10.1039/C3TC31935K
Article type
Communication
Submitted
02 Oct 2013
Accepted
21 Nov 2013
First published
22 Nov 2013

J. Mater. Chem. C, 2014,2, 801-805

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Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates

W. Yang, W. Wang, Y. Lin, Z. Liu, S. Zhou, H. Qian, F. Gao, S. Zhang and G. Li, J. Mater. Chem. C, 2014, 2, 801 DOI: 10.1039/C3TC31935K

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