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Issue 14, 2014
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Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor

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Abstract

High quality, nanostructured Bi2Te3, with an unprecedented degree of positional and orientational control of the material form on the nanoscale, is readily obtained by low pressure chemical vapour deposition using a new molecular precursor. This system offers a convenient method that delivers key structural requirements necessary to improve the thermoelectric efficiency of Bi2Te3 and to develop the nascent field of topological insulators.

Graphical abstract: Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor

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Article information


Submitted
20 Jan 2014
Accepted
12 Feb 2014
First published
12 Feb 2014

This article is Open Access

J. Mater. Chem. A, 2014,2, 4865-4869
Article type
Communication

Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor

S. L. Benjamin, C. H. (. de Groot, C. Gurnani, A. L. Hector, R. Huang, E. Koukharenko, W. Levason and G. Reid, J. Mater. Chem. A, 2014, 2, 4865
DOI: 10.1039/C4TA00341A

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