Issue 107, 2014
From the journal:

RSC Advances

Sheet resistance variation of graphene grown on annealed and mechanically polished Cu films

Jong-Kwon Lee,a   Chang-Soo Parkb  and  Heetae Kim*c  

* Corresponding authors

a Global Frontier Center for Multiscale Energy System, Seoul National University, Seoul 151-744, Republic of Korea

b Department of Physics, Hanyang University, Seoul 100-715, Republic of Korea

c Rare Isotope Science Project, Institute for Basic Science, Daejeon 305-811, Republic of Korea
E-mail: kim_ht7@yahoo.com
Tel: +82-42-878-8823

Abstract

Graphene was grown on a Cu film, processed by annealing and mechanical polishing. The sheet resistance of graphene shows ∼57% decrease by mechanical polishing for raw Cu and ∼20% decrease by annealing for 50 nm SiO2 polishing.

Graphical abstract: Sheet resistance variation of graphene grown on annealed and mechanically polished Cu films

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Article information

DOI
https://doi.org/10.1039/C4RA11734D
Article type
Communication
Submitted
03 Oct 2014
Accepted
03 Nov 2014
First published
04 Nov 2014

RSC Adv., 2014,4, 62453-62456

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Sheet resistance variation of graphene grown on annealed and mechanically polished Cu films

J. Lee, C. Park and H. Kim, RSC Adv., 2014, 4, 62453 DOI: 10.1039/C4RA11734D

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