Issue 102, 2014

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

Abstract

Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se)2 solar cell devices, in the range of 330–1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump–probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.

Graphical abstract: Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

Article information

Article type
Communication
Submitted
22 Sep 2014
Accepted
17 Oct 2014
First published
17 Oct 2014

RSC Adv., 2014,4, 58372-58376

Author version available

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

V. Nalla, J. C. W. Ho, S. K. Batabyal, Y. Wang, A. I. Y. Tok, H. Sun, L. H. Wong and N. Zheludev, RSC Adv., 2014, 4, 58372 DOI: 10.1039/C4RA10933C

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