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Issue 22, 2014
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Bottom-up nanostructured bulk silicon: a practical high-efficiency thermoelectric material

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Abstract

The effectiveness of thermoelectric (TE) materials is quantified by the dimensionless figure of merit (zT). An ideal way to enhance zT is by scattering phonons without scattering electrons. Here we show that, using a simple bottom-up method, we can prepare bulk nanostructured Si that exhibits an exceptionally high zT of 0.6 at 1050 K, at least three times higher than that of the optimized bulk Si. The nanoscale precipitates in this material connected coherently or semi-coherently with the Si matrix, effectively scattering heat-carrying phonons without significantly influencing the material's electron transport properties, leading to the high zT.

Graphical abstract: Bottom-up nanostructured bulk silicon: a practical high-efficiency thermoelectric material

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Supplementary files

Article information


Submitted
05 Aug 2014
Accepted
11 Sep 2014
First published
12 Sep 2014

Nanoscale, 2014,6, 13921-13927
Article type
Paper
Author version available

Bottom-up nanostructured bulk silicon: a practical high-efficiency thermoelectric material

A. Yusufu, K. Kurosaki, Y. Miyazaki, M. Ishimaru, A. Kosuga, Y. Ohishi, H. Muta and S. Yamanaka, Nanoscale, 2014, 6, 13921
DOI: 10.1039/C4NR04470C

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