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Issue 19, 2014
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The use of atomic layer deposition in advanced nanopatterning

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Abstract

Atomic layer deposition (ALD) is a method that allows for the deposition of thin films with atomic level control of the thickness and an excellent conformality on 3-dimensional surfaces. In recent years, ALD has been implemented in many applications in microelectronics, for which often a patterned film instead of full area coverage is required. This article reviews several approaches for the patterning of ALD-grown films. In addition to conventional methods relying on etching, there has been much interest in nanopatterning by area-selective ALD. Area-selective approaches can eliminate compatibility issues associated with the use of etchants, lift-off chemicals, or resist films. Moreover, the use of ALD as an enabling technology in advanced nanopatterning methods such as spacer defined double patterning or block copolymer lithography is discussed, as well as the application of selective ALD in self-aligned fabrication schemes.

Graphical abstract: The use of atomic layer deposition in advanced nanopatterning

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Publication details

The article was received on 11 Apr 2014, accepted on 19 Jul 2014 and first published on 25 Jul 2014


Article type: Review Article
DOI: 10.1039/C4NR01954G
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Nanoscale, 2014,6, 10941-10960

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    The use of atomic layer deposition in advanced nanopatterning

    A. J. M. Mackus, A. A. Bol and W. M. M. Kessels, Nanoscale, 2014, 6, 10941
    DOI: 10.1039/C4NR01954G

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