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Issue 15, 2014
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Selective removal of metallic single-walled carbon nanotubes in full length by organic film-assisted electrical breakdown

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Abstract

An organic film-assisted electrical breakdown technique is proposed to selectively remove metallic (m-) single-walled carbon nanotubes (SWNTs) in full length towards creation of pure semiconducting SWNT arrays which are available for the large-scale fabrication of field effect transistors (FETs). The electrical breakdown of horizontally aligned SWNT arrays embedded in organic films resulted in a maximum removal length of 16.4 μm. The removal of SWNTs was confirmed using scanning electron microscopy and Raman mapping measurements. The on/off ratios of FETs were improved up to ca. 10 000, similar to that achieved for in-air breakdown. The experimental results suggest that exothermic oxidation of organic films induces propagation of oxidation reaction, hence the long-length removal of m-SWNTs.

Graphical abstract: Selective removal of metallic single-walled carbon nanotubes in full length by organic film-assisted electrical breakdown

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Article information


Submitted
28 Mar 2014
Accepted
09 May 2014
First published
12 May 2014

This article is Open Access

Nanoscale, 2014,6, 8831-8835
Article type
Paper

Selective removal of metallic single-walled carbon nanotubes in full length by organic film-assisted electrical breakdown

K. Otsuka, T. Inoue, S. Chiashi and S. Maruyama, Nanoscale, 2014, 6, 8831
DOI: 10.1039/C4NR01690D

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