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Issue 16, 2014
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A highly conducting graphene film with dual-side molecular n-doping

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Doping is an efficient way to engineer the conductivity and the work function of graphene, which is, however, limited to wet-chemical doping or metal deposition particularly for n-doping, Here, we report a simple method of modulating the electrical conductivity of graphene by dual-side molecular n-doping with diethylenetriamine (DETA) on the top and amine-functionalized self-assembled monolayers (SAMs) at the bottom. The resulting charge carrier density of graphene is as high as −1.7 × 1013 cm−2, and the sheet resistance is as low as ∼86 ± 39 Ω sq−1, which is believed to be the lowest sheet resistance of monolayer graphene reported so far. This facile dual-side n-doping strategy would be very useful to optimize the performance of various graphene-based electronic devices.

Graphical abstract: A highly conducting graphene film with dual-side molecular n-doping

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The article was received on 24 Jan 2014, accepted on 06 Jun 2014 and first published on 11 Jun 2014

Article type: Communication
DOI: 10.1039/C4NR00479E
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Citation: Nanoscale, 2014,6, 9545-9549

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    A highly conducting graphene film with dual-side molecular n-doping

    Y. Kim, J. Park, J. Kang, J. M. Yoo, K. Choi, E. S. Kim, J. Choi, C. Hwang, K. S. Novoselov and B. H. Hong, Nanoscale, 2014, 6, 9545
    DOI: 10.1039/C4NR00479E

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