Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance work on Wednesday 27th March 2019 from 11:00 AM to 1:00 PM (GMT).

During this time our website performance may be temporarily affected. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 16, 2014
Previous Article Next Article

A highly conducting graphene film with dual-side molecular n-doping

Author affiliations

Abstract

Doping is an efficient way to engineer the conductivity and the work function of graphene, which is, however, limited to wet-chemical doping or metal deposition particularly for n-doping, Here, we report a simple method of modulating the electrical conductivity of graphene by dual-side molecular n-doping with diethylenetriamine (DETA) on the top and amine-functionalized self-assembled monolayers (SAMs) at the bottom. The resulting charge carrier density of graphene is as high as −1.7 × 1013 cm−2, and the sheet resistance is as low as ∼86 ± 39 Ω sq−1, which is believed to be the lowest sheet resistance of monolayer graphene reported so far. This facile dual-side n-doping strategy would be very useful to optimize the performance of various graphene-based electronic devices.

Graphical abstract: A highly conducting graphene film with dual-side molecular n-doping

Back to tab navigation

Supplementary files

Publication details

The article was received on 24 Jan 2014, accepted on 06 Jun 2014 and first published on 11 Jun 2014


Article type: Communication
DOI: 10.1039/C4NR00479E
Author version
available:
Download author version (PDF)
Citation: Nanoscale, 2014,6, 9545-9549

  •   Request permissions

    A highly conducting graphene film with dual-side molecular n-doping

    Y. Kim, J. Park, J. Kang, J. M. Yoo, K. Choi, E. S. Kim, J. Choi, C. Hwang, K. S. Novoselov and B. H. Hong, Nanoscale, 2014, 6, 9545
    DOI: 10.1039/C4NR00479E

Search articles by author

Spotlight

Advertisements