Li doped NiO nanowires with a diameter smaller than 100 nm were synthesized by electrospinning. The nanowires exhibit p-type characteristics with improved electrical conductivity through Li doping. Moreover, an enhanced gating effect was obtained in Li–NiO-nanowire-based field effect transistors (FETs), which hold great potential in transparent optoelectronics.
K. Matsubara, S. Huang, M. Iwamoto and W. Pan, Nanoscale, 2014, 6, 688 DOI: 10.1039/C3NR04953A
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