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Issue 8, 2014
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Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

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Abstract

We report on an interdiffusion method to fabricate pin-hole free perovskite films using a low temperature (<105 °C) solution process. A high efficiency of 15.4%, with a fill factor of ∼80%, was achieved for the devices under one sun illumination. The interdiffusion method results in high device yield, with an efficiency of above 14.5% for more than 85% of the devices.

Graphical abstract: Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

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Publication details

The article was received on 11 Apr 2014, accepted on 19 May 2014 and first published on 20 May 2014


Article type: Communication
DOI: 10.1039/C4EE01138D
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Energy Environ. Sci., 2014,7, 2619-2623

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    Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers

    Z. Xiao, C. Bi, Y. Shao, Q. Dong, Q. Wang, Y. Yuan, C. Wang, Y. Gao and J. Huang, Energy Environ. Sci., 2014, 7, 2619
    DOI: 10.1039/C4EE01138D

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