Indium-tris-guanidinates: a promising class of precursors for water assisted atomic layer deposition of In2O3 thin films

Abstract

Two closely related mononuclear homoleptic indium-tris-guanidinate complexes have been synthesized and characterized as precursors for atomic layer deposition (ALD) of In₂O₃. In a water assisted ALD process, high quality In₂O₃ thin films have been fabricated for the first time using the new class of precursors as revealed by the promising ALD growth characteristics and film properties.