Issue 8, 2014

Epitaxial graphene on SiC{0001}: advances and perspectives

Abstract

We review here recent progress on epitaxial graphene grown on a SiC substrate. Epitaxial graphene can be easily grown by heating the SiC single crystal in a high vacuum or in an inert gas atmosphere. The SiC surfaces used for graphene growth contain Si- and C-terminated faces. On the Si-face, homogeneous and clean graphene can be grown with a controlled number of layers, and the carrier mobility reaches as high as several m2 V s−1, although this is reduced by the presence of the substrate steps. On the C-face, although the number of layers is not homogeneous, twisted bilayer graphene can be grown, which is expected to be the technique of choice to modify the electronic structure of graphene. From the application point of view, graphene on SiC will be the platform used to fabricate high-speed electronic devices and dense graphene nanoribbon arrays, which will be used to introduce a bandgap.

Graphical abstract: Epitaxial graphene on SiC{0001}: advances and perspectives

Article information

Article type
Perspective
Submitted
26 Oct 2013
Accepted
05 Dec 2013
First published
19 Dec 2013

Phys. Chem. Chem. Phys., 2014,16, 3501-3511

Epitaxial graphene on SiC{0001}: advances and perspectives

W. Norimatsu and M. Kusunoki, Phys. Chem. Chem. Phys., 2014, 16, 3501 DOI: 10.1039/C3CP54523G

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