Jump to main content
Jump to site search

Issue 1, 2014
Previous Article Next Article

Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering

Author affiliations

Abstract

The understanding of the mechanisms of macropore formation in p-type Si with respect to modulation of the pore diameter is still in its infancy. In the present work, macropores with significantly modulated diameters have been produced electrochemically in p-type Si. The effect of the current density and the amount of surfactant in the etching solution are shown to influence the modulation in pore diameter and morphology. Data obtained during the etching process by in situ FFT impedance spectroscopy correlate the pore diameter variation with certain time constants found in the kinetics of the dissolution process. Raman scattering and electron microscopy confirm the mesoscopic structure and roughening of the pore walls. Spectroscopic and microscopic methods confirm that the pore wall morphology is correlated with the conditions of pore modulation.

Graphical abstract: Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering

Back to tab navigation

Supplementary files

Article information


Submitted
24 Aug 2013
Accepted
29 Oct 2013
First published
30 Oct 2013

Phys. Chem. Chem. Phys., 2014,16, 255-263
Article type
Paper

Pore size modulation in electrochemically etched macroporous p-type silicon monitored by FFT impedance spectroscopy and Raman scattering

E. Quiroga-González, J. Carstensen, C. Glynn, C. O'Dwyer and H. Föll, Phys. Chem. Chem. Phys., 2014, 16, 255
DOI: 10.1039/C3CP53600A

Social activity

Search articles by author

Spotlight

Advertisements