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Issue 44, 2014
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Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

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Abstract

LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been developed using porous semiconductors. Here, the growth of porous GaN epitaxial layers oriented along the [0001] crystallographic direction on Al2O3, SiC, AlN and GaN substrates is demonstrated. A lattice mismatch between the substrate and the porous GaN layer directly affects the structure and porosity of the porous GaN layer on each substrate. Deposition of unintentionally doped n-type porous GaN on non-porous p-type GaN layers allows for the fabrication of high quality rectifying p–n junctions, with potential applications in high brightness unencapsulated GaN-based light emitting diodes and high surface area wide band gap sensor devices.

Graphical abstract: Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

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Publication details

The article was received on 01 Jul 2014, accepted on 19 Sep 2014 and first published on 22 Sep 2014


Article type: Paper
DOI: 10.1039/C4CE01339E
Citation: CrystEngComm, 2014,16, 10255-10261
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    Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

    O. V. Bilousov, J. J. Carvajal, J. Mena, O. Martínez, J. Jiménez, H. Geaney, F. Díaz, M. Aguiló and C. O'Dwyer, CrystEngComm, 2014, 16, 10255
    DOI: 10.1039/C4CE01339E

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