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Issue 8, 2014
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Li-doped ZnO nanorods with single-crystal quality – non-classical crystallization and self-assembly into mesoporous materials

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Abstract

The benefits and promise of nanoscale dimensions for the properties of (ceramic) semiconductors are widely known. 1-D nanostructures in particular have proven to be of extraordinary relevance due to their applicability in future electronic and optoelectronic devices. Key to successful technological implementation of semiconductor nanostructures is the control of their electronic properties via doping. Despite its tremendous importance, precise chemical doping of defined nano-objects has been addressed rarely so far. Frequent problems are the creation of secondary defects and related undesired property changes by incorporation of hetero-elements, and the difficulty in ensuring a uniform and precise positioning of the dopant in the nanocrystal lattice. Here, we present the synthesis of Li-doped zinc oxide nanorods, which possess excellent (single-crystal) quality. The method is based on a novel non-classical crystallization mechanism, comprising an unusually oriented disassembly step. Afterwards, the nanorods are incorporated into mesoporous layers using colloidal self-assembly. Proof-of-principle gas sensing measurements with these novel materials demonstrate the beneficial role of Li-doping, indicating not only better conductivity but also the occurrence of catalytic effects.

Graphical abstract: Li-doped ZnO nanorods with single-crystal quality – non-classical crystallization and self-assembly into mesoporous materials

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Publication details

The article was received on 22 Aug 2013, accepted on 21 Oct 2013 and first published on 22 Oct 2013


Article type: Paper
DOI: 10.1039/C3CE41670D
CrystEngComm, 2014,16, 1525-1531

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    Li-doped ZnO nanorods with single-crystal quality – non-classical crystallization and self-assembly into mesoporous materials

    C. Lizandara-Pueyo, S. Dilger, M. R. Wagner, M. Gerigk, A. Hoffmann and S. Polarz, CrystEngComm, 2014, 16, 1525
    DOI: 10.1039/C3CE41670D

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