Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 5, 2014
Previous Article Next Article

Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide

Author affiliations

Abstract

A thin-film transistor (TFT) non-volatile memory (NVM) device was fabricated using α-helix poly(γ-methyl-L-glutamate) (PMLG) as a ferroelectric layer. In order to study the mechanism of memory driving, the temperature dependence of transfer characteristics and memory performance was investigated. It was revealed that the cooperative movement of the large dipole moment along the rod-like main chain and that of the small dipole moment in the side chain played an important role in the memory function.

Graphical abstract: Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide

Back to tab navigation

Article information


Submitted
10 Sep 2013
Accepted
18 Nov 2013
First published
18 Nov 2013

J. Mater. Chem. C, 2014,2, 879-883
Article type
Paper

Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide

L. Liang, T. Fukushima, K. Nakamura, S. Uemura, T. Kamata and N. Kobayashi, J. Mater. Chem. C, 2014, 2, 879
DOI: 10.1039/C3TC31777C

Social activity

Search articles by author

Spotlight

Advertisements